CLARION2-TRINITY: A Compton-suppressed HPGe and GAGG:Ce-Si-Si array for absolute cross-section measurements with heavy ions

Electron Scattering from Disilane (si 2 H 6 ) Molecules. Absolute Total Cross Section Measurements from 1 to 370 Ev Electron Scattering from Disilane (si 2 H 6 ) Molecules. Absolute Total Cross Section Measurements from 1 to 370 Ev

Absolute grand total cross sections (TCSs) for electron–disilane (Si2H6) scattering have been measured over the energy range from 1 to 370 eV in a linear transmission experiment. The low-energy TCS is dominated by a broad resonant-like enhancement. In the region of the maximum the present grand TCS values appeared to be distinctly lower than previously reported integral elastic cross section da...

Absolute cross section for Si„3s S ̃3s3p P... electron-impact excitation

We have measured the absolute cross section for electron-impact excitation ~EIE! of Si(3s S ̃3s3p P) from energies below threshold to 11 eV above. A beams modulation technique with inclined electron and ion beams was used. Radiation at 120.7 nm from the excited ions was detected using an absolutely calibrated optical system. The fractional population of the Si(3s3p P) metastable state in the inc...

Results of a Si/CdTe Compton Telescope

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an a...

Sharp corners in the cross section of ultrathin Si nanowires.

We have determined stable geometries for pristine Si nanowires grown along their 100 axis through systematic density functional studies. Strikingly, Si nanowires with diameters smaller than 1.7 nm prefer a shape that has a square cross section. This stems from dimerization between corner atoms and also from benign reconstruction patterns that maximally saturate Si dangling bonds.

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions